Two-Photon-Absorption-Enhanced Laser-Assisted Device Alteration and Single-Event Upsets in 28nm Silicon Integrated Circuits
نویسندگان
چکیده
By inducing two-photon absorption within the active layer of a 28nm test chip, we demonstrate nonlinear laser-assisted device alteration and single-event upsets by temporarily perturbing the timing characteristics of sensitive transistors. Individual qualitative and quantitative evaluations are presented for both techniques, with lateral resolutions demonstrated with sub-100nm performance. A simplistic signal response rate comparison analysis of these two technologies is also presented.
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